1. MOS (Metal Oxide Semiconductor) transistors

Metal Oxide Semiconductor (MOS) field-effect power transistors are based on the same physical principles as MOS components used in microelectronics (see article , § 2.4). The structure is different, however, to meet the current capacity and voltage withstand requirements specific to power applications:

• parallel integration, in a single crystal, of a sufficient number of identical elementary cells, connected to the same source, gate and drain terminal contacts (current capacitance);

• incorporation into the drain junction of a large, low-doped region in which space charge can develop in blocking situations (voltage holding).