Conclusion

The ALD technique was introduced to microelectronics in the early 2000s, mainly for applications using high dielectric permittivity oxides, such as DRAM memories, MIM capacitors and HKMG transistors. Today, ALD is evolving towards PEALD, which enables a wider range of film compositions to be obtained, and deposits to be made at lower temperatures, from 50°C upwards.

The microelectronics industry is maturing, and competition is fierce with the arrival of Asian foundries over the last ten years. In addition to circuit performance, manufacturing cost is a key factor. Right from the R&D phase, cost is one of the parameters analyzed when choosing technological solutions. While for dielectrics and electrodes for capacitors and transistors, criteria such as leakage current, reliability, threshold voltage control and the use of complex topologies direct choices towards...