1. DRAM memories
The first use of ALD for volume chip production dates back to the early 2000s, for the manufacture of dielectrics and capacitor electrodes for DRAM memories (figure 1 ). An elementary memory cell consists of a transistor associated with a capacitor, and the logic state of this memory is then defined as a function of the presence or absence of electrical charges across the capacitor.
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DRAM memories
MIM capabilities
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