Conclusion

With improvements in the material's growth and crystalline quality, and advances in technological processes enabling ever-smaller dimensions, various GaN-based devices have been developed. These include light-emitting diodes (LEDs) and lasers in the field of optics. While this market remains the most important in terms of volume, notably for lighting, HEMT has seen very rapid development, initially for power microwave applications, then for the design of power switches dedicated to power electronics converters.

In the field of RF electronics, the GaN die has all the assets to supplant the GaAs die, especially for power applications, but also for low-noise amplifiers, which have similar performance, but can handle much higher input powers. Gradually, GaN microwave devices have shown interesting performance at higher and higher frequencies, with the result that amplifiers...