Operation and electrical characteristics of the bipolar transistor
Integrated Bipolar Transistors Silicon Germanium BiCMOS Technologies

Add to my library

E2427 V2 Article

Operation and electrical characteristics of the bipolar transistor


Integrated Bipolar Transistors Silicon Germanium BiCMOS Technologies

Author : Pascal CHEVALIER

Publication date: January 10, 2021 | Lire en français

Add to my library Add to my library

Logo Techniques de l'Ingenieur You do not have access to this resource.
Request your free trial access! Free trial

Already subscribed?

1. Operation and electrical characteristics of the bipolar transistor

1.1 How it works

The operation of the component is apprehended using a homojunction NPN bipolar transistor, i.e. made of a single material such as silicon. This active component is made up of two head-to-tail PN junctions, each made up of three main regions successively doped N + , P and N. These regions are called emitter, base and collector respectively. In this paragraph, we give the operating principles for an NPN transistor in a forward operating mode, i.e. when the emitter-base junction (E-B) is forward biased (V BE > 0 V), while the base-collector junction (B-C) is reverse biased (V BC < 0 V). These polarizations will modulate the two...

You do not have access to this resource.
Logo Techniques de l'Ingenieur

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource. Click here to request your free trial access!

Already subscribed?


Article included in this offer

"Electronics"

( 263 articles )

Complete knowledge base

Updated and enriched with articles validated by our scientific committees

Services

A set of exclusive tools to complement the resources

View offer details

Dans les ressources documentaires

MMIC : composants - Transistors, technologies et modélisation

Cet article traite des circuits intégrés microondes (MMIC). Il décrit les principes de fonctionnement des...

Dispositifs HEMT à base de GaN - Technologie et caractérisation

Cet article est consacré au Transistor à Haute Mobilité Electronique (HEMT) à base de GaN dont le fonctio...

Composants bipolaires (thyristors, triacs, GTO, GCT et BJT) : circuits de commande

Cet article présente les principes de commande des principaux composants à semi-conducteur de puissance b...

Technologies CMOS - Transistor MOS

Cet article a pour objectif de fournir les bases de compréhension du fonctionnement des transistors de ty...

Tous les livres blancs
Toutes les actualités
Contact us