Physical phenomena involved in power semiconductor components
Introduction to power microelectronic devices
Article REF: E3960 V2
Physical phenomena involved in power semiconductor components
Introduction to power microelectronic devices

Author : Luong Viêt PHUNG

Publication date: June 10, 2019 | Lire en français

Logo Techniques de l'Ingenieur You do not have access to this resource.
Request your free trial access! Free trial

Already subscribed?

2. Physical phenomena involved in power semiconductor components

The behavior of electrical components is complex to study, and it's hard to ignore semiconductor physics to understand how they work. In fact, their performance and imperfections are determined by the laws of semiconductor physics.

Materials such as silicon (Si), germanium (Ge) and carbon (C) share a common proximity to the column of the periodic table. Silicon is a valence 4 element, which means it has 4 free electrons on its last layer; it is therefore said to be tetravalent.

As the elements boron (B) and phosphorus (P) are located in neighboring columns, it is possible for them, when introduced in small proportions into the semiconductor material, to either give up an electron or capture one. In the first case, a donor impurity is inserted, enriching the semiconductor with free electrons, resulting in n-type doping. The most common donor...

You do not have access to this resource.
Logo Techniques de l'Ingenieur

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource. Click here to request your free trial access!

Already subscribed?


Ongoing reading
Physical phenomena involved in power semiconductor components

Article included in this offer

"Electronics"

( 262 articles )

Complete knowledge base

Updated and enriched with articles validated by our scientific committees

Services

A set of exclusive tools to complement the resources

View offer details