Power components in wide bandgap materials
Introduction to power microelectronic devices
Article REF: E3960 V2
Power components in wide bandgap materials
Introduction to power microelectronic devices

Author : Luong Viêt PHUNG

Publication date: June 10, 2019 | Lire en français

Logo Techniques de l'Ingenieur You do not have access to this resource.
Request your free trial access! Free trial

Already subscribed?

4. Power components in wide bandgap materials

The development of alternative energy sources means that power grids need to be rethought in order to bring this energy from multiple sources to the customer, over long distances. With this in mind, HVDC networks are set to expand: power switches embedded in converters need to adapt to a new voltage range that can reach several tens of kV!

Silicon is therefore no longer viable: a drift zone doping of 10 13 cm -3 for an epitaxy thickness of 200 µm gives a resistivity of several Ω. Chip sizes are becoming large (several cm 2 ) in order to maintain acceptable on-state resistances.

Wide bandgap materials, as their name suggests, have a wider bandgap than silicon, from approximately 3 to over 5 eV. The best-known...

You do not have access to this resource.
Logo Techniques de l'Ingenieur

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource. Click here to request your free trial access!

Already subscribed?


Ongoing reading
Power components in wide bandgap materials

Article included in this offer

"Electronics"

( 262 articles )

Complete knowledge base

Updated and enriched with articles validated by our scientific committees

Services

A set of exclusive tools to complement the resources

View offer details