Article | REF: R1178 V2

Measurements on optoelectronic emission components

Authors: Irène JOINDOT, Naveena GENAY, Philippe CHANCLOU

Publication date: December 10, 2007 | Lire en français

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    1. Semiconductor emitter junctions

    1.1 Operating principles

    Light-emitting semiconductor devices use electroluminescence as a physical effect. The phenomenon of electroluminescence is attributed to the radiative recombination of excess charge carriers injected into the vicinity of, say, a P-N junction.

    The energy released in the form of radiation is equal to the difference between the energy of the ionized state, known as the "electron-hole pair", and the energy of the bound state (recombined electron and hole).

    Two conditions must be met for light emission to occur. Firstly, the probability of a radiative transition must be high, and secondly, there must be a high density of carriers capable of making this transition.

    The first point is obtained...

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    Semiconductor emitter junctions