Semiconductor emitter junctions
Measurements on optoelectronic emission components
Article REF: R1178 V2
Semiconductor emitter junctions
Measurements on optoelectronic emission components

Authors : Irène JOINDOT, Naveena GENAY, Philippe CHANCLOU

Publication date: December 10, 2007 | Lire en français

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1. Semiconductor emitter junctions

1.1 Operating principles

Light-emitting semiconductor devices use electroluminescence as a physical effect. The phenomenon of electroluminescence is attributed to the radiative recombination of excess charge carriers injected into the vicinity of, say, a P-N junction.

The energy released in the form of radiation is equal to the difference between the energy of the ionized state, known as the "electron-hole pair", and the energy of the bound state (recombined electron and hole).

Two conditions must be met for light emission to occur. Firstly, the probability of a radiative transition must be high, and secondly, there must be a high density of carriers capable of making this transition.

The first point is obtained...

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