FDSOI Technology
Fully Depleted SOI Devices: More Moore applications and New Architectures

The FDSOI (Fully Depleted Silicon-On-Insulator MOSFET) technology has very great advantages over transistors made on bulk Si or on partially depleted Silicon On Insulator (SOI) layers. In particular, the possible integration down to decananometric gate lengths, a substantial reduction in energy consumption at the same operating frequency, the possibility of operating with good performance and without significant parasitic effects over a wide temperature range (4 K - 600 K), the reduction of the variability of electrical properties due to the use of undoped channels, its utility in DRAM, SRAM, nonvolatile memory applications, the design flexibility of SOI circuits, as well as the possible development of additional functionalities in this platform, particularly...