HEMT field effect structures
Dispositifs HEMT à base de GaN

Field-effect transistors are unipolar. The only carriers are usually electrons, as they are more mobile than holes. The principle of this component is based on the existence of a conductive channel whose conductance can be modulated by applying an electric field perpendicular to the current direction.

A field-effect transistor (figure 1 ) consists of an n-type semiconductor parallelepiped and three metal contacts: two ohmic contacts for electrical connection to the channel, and a Schottky contact for control. The designation of the ohmic contacts is defined in relation to the direction of current when a positive voltage...