High-power IGBTs
MOSFET and IGBT control circuits

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D3233 V1 Article

High-power IGBTs
MOSFET and IGBT control circuits

Authors : Stéphane LEFEBVRE, Bernard MULTON

Publication date: August 10, 2003 | Lire en français

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5. High-power IGBTs

5.1 Control principles

Control circuits for very high-power transistors ( V BR > 1700 V) almost always require an isolated power supply, even for low-side transistors, not least for safety reasons.

.Symmetrical pulse transformer control circuit
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