2. ASD: Approaches and Strategies
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2.1.1 Bottom-up Approach and Temperature
In an ASD approach, the film is directly formed with the desired geometry on the growth areas previously defined on the substrate. This requires controlling the selectivity of growth by promoting or inhibiting nucleation in specific regions of the substrate. The areas defining the pattern are first delineated, and then the film grows locally on specific regions of the substrate, following a bottom-up fabrication approach.
The atomic...
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ASD: Approaches and Strategies
Bibliography
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(1) - ALAM (M.A.), GREEN (M.L.) - Mathematical description of atomic layer deposition and its application to the nucleation and growth of gate dielectric layers. - J. Appl. Phys., 94, p. 3403-3413 (2003).
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(2) - KIRSCH (P.D.), QUEVEDO-LOPEZ (M.A.), LI (H.-J.), SENZAKI...
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