ASD: Examples of Industrial Applications
Area Selective Deposition - ASD

Defect-free filling of high-aspect-ratio structures (gap filling) is a major challenge in the fabrication of advanced nanoelectronic devices. In narrow, deep trenches, conventional deposition techniques (CVD or physical vapor deposition, PVD) can generate filling defects such as voids or seams. These defects result primarily from the limited diffusion of precursors to the bottom of these structures, as well as from the formation of material overhangs due to faster growth at the entrance of the trenches.

The equipment manufacturer Applied Materials has developed an industrial platform (Centura iSprint ALD/CVD SSW (Seam-Suppressed Tungsten)) to overcome these limitations during tungsten deposition for the formation of contacts and...