Overview
ABSTRACT
Area Selective Deposition is a technique that allows a material to be deposited only on specific areas of a substrate, without the need for photolithography or etching steps. It fundamentally relies on a contrast in surface reactivity, which prevents growth where it is not desired while allowing it where it is wanted, using an atomic layer deposition process. On a substrate, the inherent reactivity contrast is typically weak, and it can be enhanced either by activating or by deactivating the surface in order to either promote or block the growth, respectively.
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Read the articleAUTHORS
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Marceline BONVALOT : Research Professor - LTM-CNRS, CEA-LETI, Grenoble, France
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Rémy GASSILLOUD : Research Engineer - University of Grenoble Alpes, CEA-LETI, Grenoble, France
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Vincent JOUSSEAUME : Research Director - Grenoble Alpes University, CEA-LETI, Grenoble, France
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David MUÑOZ-ROJAS : CNRS Research Director - Grenoble Alpes University, CNRS, Grenoble INP, LMGP, Grenoble, France
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Christophe VALLÉE : Professor - University at Albany, College of Nanotechnology Science and Engineering, Albany, NY, USA
INTRODUCTION
This article discusses area-selective deposition (ASD) processes and the technical solutions that enable a material to be deposited only on specific areas of a substrate, without the need for lithography or etching steps. The fundamental principle of ASD relies on a contrast in surface reactivity to ensure that material growth occurs where desired and is prevented elsewhere. In the context of the ultra-miniaturization of microelectronic devices, Atomic Layer Deposition (ALD) plays a central role in the development of ASD.
First, we define the inherent selectivity characteristic of ALD by examining the nucleation delay and the fundamental mechanisms responsible for this selectivity (§ 1 ). We then describe the various approaches for increasing this selectivity (§ 2 ):
– selective activation of growth zones, for example through dedicated plasma or chemical treatments that promote nucleation and growth of the deposited material;
– selective inhibition of non-growth zones through chemical passivation that delays or blocks nucleation, achieved through the use of self-assembled monolayers, molecular inhibitors, or chemical treatments;
– definition of ABC-type super-cycles combining, as desired, inhibition, passivation, selective cleaning, and a surface reactivation step, thereby maintaining the selectivity of an ALD process during deposition.
Next, spatial ALD (SALD) is presented in detail in the context of the industrial integration of these selective deposition processes, as this approach shows promise for meeting the demands of large-scale production. Section
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KEYWORDS
additive manufacturing | atomic layer deposition | area selective deposition | topographically selective deposition | bottom-up growth
Area Selective Deposition - ASD
Area-Selective Deposition: Background and Definition
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