Overview
ABSTRACT
This article presents the principles of the chemical vapor deposition method based on alternating precursor pulses, known as Atomic Layer Deposition (ALD). The discussion covers the range of materials that can be synthesized using this technique, its environmental impact, and its various fields of application together with their recent developments. Finally, a practical description of the steps involved in implementing an ALD process is provided.
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Read the articleAUTHORS
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Nathanaelle SCHNEIDER : Research Director at the CNRS, Ph.D. in Chemistry from the Universities of Strasbourg and Heidelberg - Île-de-France Photovoltaics Institute (IPVF), UMR 9006 CNRS, École Polytechnique – IP Paris, Chimie Paristech – PSL, Palaiseau, France
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Élisabeth BLANQUET : Research Director at the CNRS, Ph.D. in Materials Science from Grenoble INP - SIMaP, Université Grenoble Alpes, Grenoble INP, CNRS, Grenoble, France
INTRODUCTION
The alternating-flow chemical vapor deposition technique, more commonly known as Atomic Layer Deposition (ALD), is a technique derived from chemical vapor deposition (CVD). This deposition process is based on the sequential introduction of gaseous precursors or molecular reactants—referred to as precursors—to promote self-limiting growth controlled by the substrate surface and to enable the fabrication of the target material one layer at a time.
In this article, following a brief historical overview, we explain in detail the general principle of ALD. To do so, we review two fundamental concepts related to it (chemical vapor deposition and adsorption), then describe material growth, detailing the various mechanisms that may occur. We also discuss the classes of precursors suitable for this method, as well as the types of deposition reactors used. Particular attention is given to the importance of deposition parameters (precursor, temperature, pulse and purge times, etc.) and their influence on the surface chemistries involved.
Next, we provide an overview of the materials that can be deposited using this technique, explore its environmental impact, its most recent developments, and its various fields of application. Finally, the key steps in implementing an ALD process are explained.
Key Points
Field: Thin-film deposition techniques
Technology maturity level: mature
Technologies involved: atomic layer deposition (ALD)
Application areas: microelectronics, photovoltaics, energy storage and conversion, medical, optics
Major French players: see GDR RAFALD map
– Competitiveness clusters: Minalogic
– Centers of expertise: CNRS, universities, CEA
– Industrial companies: Air Liquide, Annealsys, CILKOA, Encapsulix, Kemstream, Microtest, OMICRON, STMicroelectronics
Other global players:
Applied Materials, ASM, Beneq Oy, Jusung Engineering Co. Ltd., Intel, Lam Research, Oxford Instruments, Samsung, Tokyo Electron Limited, Ultratech/Cambridge Nanotech, and Veeco Instruments Inc.
Argonne National Laboratory, University of Colorado, Eindhoven University, Ghent University, Hanyang University, University of Helsinki, Ikerbasque, IMEC, Leibniz University, North Carolina State University, Seoul National University, Stanford University, Tyndall National Institute, VTT Technical Research Center of Finland, Yonsei University
Contacts:
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KEYWORDS
materials | applications | Implementation | life cycle assessment | principles | ALD
EDITIONS
Other editions of this article are available:
- Archived version Oct 2016 1 by Nathanaelle SCHNEIDER, Frédérique DONSANTI
CAN BE ALSO FOUND IN:
Atomic Layer Deposition (ALD)
General Principle of ALD
Bibliography
- (1) - PARSON (G.N.), ELAM (J.W.), GEORGE (S.M.), HAUKKA (S.), HYEONGTAG (J.), KESSELS (E.W.M.M.), LESKELA (M.), POODT (P.), RITALA (M.), ROSSNAGEL (S.M.) - History of atomic layer deposition and its relationship with the American Vacuum Society. - Journal of Vacuum Science & Technology A, 31, 050818...
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