Conclusion

This article describes the main contexts of use of circuits for close control of power semiconductor components. These circuits include at least a static and dynamic control stage for the CSCP(s) driver interface, as well as other complementary functions to observe, protect and, more generally, guarantee the reliable and optimal operation of the CSCP(s).

The introduction of large-gap components (SiC and GaN), with switching speeds considerably higher than those of silicon components, has necessitated the development of appropriate close-control circuits (switching speed, dV/dt resistance, dead times, etc.). This development has gone hand in hand with denser integration of power chips, in particular to reduce parasitic inductances in switching meshes. This trend is set to intensify over the next few years, as switching frequencies increase, even at high power levels....