Overview
ABSTRACT
Almost a century after the discovery of its semi-conductive properties in 1907, the silicon carbide appeared on the economic scene with the placing on the market of the first commercial compounds: the Schottky diodes in 2002 and the JFET transistors shortly after as well as the MESFETs in the hyperfrequency field. The extremely high price of substrates and epitaxial layers requires very precise numerical simulations of behaviors in the static and dynamic regime of compounds. Indeed the more precise the simulations, the lesser the number of tests before the compounds are achieved.
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Christophe RAYNAUD : Senior lecturer at INSA LYON
INTRODUCTION
Almost a century after the discovery of its semiconductor properties in 1907, silicon carbide appeared on the economic scene with the launch of the first commercial components: Schottky diodes in 2002 and JFET transistors shortly afterwards, as well as MESFETs in the microwave field. The very high cost of epitaxial substrates and layers makes it imperative to have highly accurate numerical simulations of the static and dynamic behavior of these components. Indeed, the more accurate the simulations, the more we can hope to reduce the number of tests required before the components can be made a success.
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Physical and electronic properties of the silicon carbide (SiC)
Properties of silicon carbide (SiC)
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