Conclusions
Voltage withstand of power semiconductors
Article REF: D3104 V1
Conclusions
Voltage withstand of power semiconductors

Author : Philippe LETURCQ

Publication date: November 10, 2000 | Lire en français

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4. Conclusions

Provided that edge and surface effects are controlled by suitable junction terminations, the voltage withstand of a power component depends mainly on the parameters of the base region, notably thickness and doping, as shown by the various relationships established in paragraph 2 of this article for planar devices. The "base" thus appears as the main region in the structure of a power...

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