The CSCP in a switchgear cell
Driving Power Semiconductor Devices : Context
Article REF: D3230 V2
The CSCP in a switchgear cell
Driving Power Semiconductor Devices : Context

Authors : Stéphane LEFEBVRE, Bernard MULTON, Nicolas ROUGER

Publication date: August 10, 2017 | Lire en français

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3. The CSCP in a switchgear cell

3.1 Ideal controlled switching

Energy conversion, controlled by the chopping of currents and voltages, uses components that in most cases switch to receivers behaving dynamically like current sources. Virtually all existing devices behave in this way, during switching phases, like the basic "controlled switch-diode" switching cell shown in figure 17 and idealized (perfect input voltage source and absence of parasitic inductances). This cell, if not the only one, is largely representative of most converter structures, i.e. the switching of a transistor (whatever its technology) with a fast PiN-type diode in which the phenomenon of reverse overlap plays an important role...

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