Article | REF: D3230 V2

Driving Power Semiconductor Devices : Context

Authors: Stéphane LEFEBVRE, Bernard MULTON, Nicolas ROUGER

Publication date: August 10, 2017 | Lire en français

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    4. To real switching cells and their special features

    In order to introduce some of the specific features of real switching cells, we offer a few targeted examples here, based on time simulations with SPICE models supplied by the manufacturers. Although these models are based on identifying the parameters of an equivalent diagram, they faithfully reflect the evolution of electrical quantities during switching. Thus, we first propose a switching cell with an input voltage of V bus = 400 V and a constant-current type load I 0 = 10 A. One of the transistors proposed in table 2 was used, a vertical superjunction MOSFET transistor STB34N65M5 (650 V, 110 mΩ, STMicroelectronics), for...

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