Acronyms and symbols
HEMTs Devices based on GaN Technology and characterization

Archive REF: E1996 V1

Acronyms and symbols
HEMTs Devices based on GaN Technology and characterization

Author : Jean-Claude DE JAEGER

Publication date: November 10, 2017 | Lire en français

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7. Acronyms and symbols

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Bibliography

(1) - CAPPY (A.) - « Propriétés physiques et performances potentielles des composants submicroniques à effet de champ : structures conventionnelles et à gaz d'électrons bidimensionnel ». - Thèse de Doctorat d'État en Sciences Physiques, université de Lille 1 (Décembre 1986).
(2)...

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