Article | REF: E1996 V2

HEMTs Devices based on GaN Technology and characterization

Author: Jean-Claude DE JAEGER

Publication date: July 10, 2024 | Lire en français

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    5. Heat dissipation

    5.1 Experimental methods for measuring heat dissipation

    Self-heating in power GaN HEMTs is a phenomenon that limits transistor performance, so it's important to determine the temperature inside the transistor. There are several experimental approaches to determining the temperature in components. Optical methods can be used to determine the temperature at any point on the component, with varying degrees of accuracy. Electrical methods, on the other hand, provide an average temperature along the length of the component.

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