3. Characterization of HEMT transistors
After manufacture, GaN HEMT transistors for power applications are measured using a variety of techniques. To this end, when a set of masks is produced, in addition to the transistors themselves, various test patterns are included to characterize the manufacturing process (compliance with dimensions, yield, electrical parameter values, etc.).
3.1 Electrical characterization in static and pulse regimes
3.1.1 Electrical quantities under static conditions
Static component characterization is...
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Characterization of HEMT transistors
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International Conference on Nitride semiconductors (ICNS)
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