1. HEMT field effect structures
1.1 Description of a HEMT component
Field-effect transistors are unipolar. The only carriers are usually electrons, as they offer greater mobility than holes. The principle of this component is based on the existence of a conductive channel whose conductance can be modulated by applying an electric field perpendicular to the current direction.
A field-effect transistor (figure 1 ) consists of an n-type semiconductor parallelepiped and three metal contacts: two ohmic contacts to establish an electrical connection with the channel, and a Schottky contact to establish the control. The denomination of the ohmic contacts is defined in relation to the direction...
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HEMT field effect structures
Technological processes for HEMT devices
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International Conference on Nitride semiconductors (ICNS)
The last (14th) took place in Fukuoka, Japan in November 2023.
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