3. Conclusion
This article describes the main types of III-V and silicon field-effect and bipolar transistors that are the basic active elements in MMICs.
The article also describes the electrical modeling techniques for these transistors, and the various phenomenological or physics-based models that are mostly found in the component libraries of design tools.
As for future technological developments, we believe that we have reached a time of maturation for most existing III-V and silicon technologies; these technologies now meet most MMIC specifications in terms of frequency, noise and power. By way of example, the famous "THz gap" is now being closed electronically, thanks to the development of MMICs (III-V and silicon).
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