Comparative summary and trends
III-V heterostructure-based transistors and integrated circuits
Article REF: E2450 V2
Comparative summary and trends
III-V heterostructure-based transistors and integrated circuits

Authors : André SCAVENNEC, Sylvain DELAGE

Publication date: November 10, 2011, Review date: June 3, 2015 | Lire en français

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5. Comparative summary and trends

A comparative summary of the most developed heterojunction transistors (GaN HEMT, P-HEMT and M-HEMT GaAs and InP and GaAs and InP HBT) is presented in 3 . The following general comments can be added.

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