Materials and heterojunction physics
III-V heterostructure-based transistors and integrated circuits
Article REF: E2450 V2
Materials and heterojunction physics
III-V heterostructure-based transistors and integrated circuits

Authors : André SCAVENNEC, Sylvain DELAGE

Publication date: November 10, 2011, Review date: June 3, 2015 | Lire en français

Logo Techniques de l'Ingenieur You do not have access to this resource.
Request your free trial access! Free trial

Already subscribed?

1. Materials and heterojunction physics

1.1 Materials for heterojunction electronic components

The large family of III-V semiconductors, of which GaAs, GaN and InP are only the best-known representatives in microelectronics, comprises alloys combining, in equal proportions, atoms from column III (Al, Ga, In...) and column V (N, P, As, Sb...) of Mendeleev's periodic table of elements. Their crystal structure usually takes the form of two face-centered cubic sub-lattices, made up of column III and column V atoms respectively, which interpenetrate to form a zinc-blende crystal. This type of crystal is analogous to the diamond lattice of silicon, from which it differs only in that the two sub-lattices here are made up of different atoms. A major exception is GaN and its alloys, whose most common crystal structure is a wurtzite...

You do not have access to this resource.
Logo Techniques de l'Ingenieur

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource. Click here to request your free trial access!

Already subscribed?


Article included in this offer

"Electronics"

( 262 articles )

Complete knowledge base

Updated and enriched with articles validated by our scientific committees

Services

A set of exclusive tools to complement the resources

View offer details