Passivation of high-efficiency crystalline silicon photovoltaic cells
Atomic layer deposition for photovoltaics
Research and innovation REF: RE257 V1
Passivation of high-efficiency crystalline silicon photovoltaic cells
Atomic layer deposition for photovoltaics

Authors : Danièle BLANC PELISSIER, Nathanaelle SCHNEIDER

Publication date: November 10, 2016 | Lire en français

Logo Techniques de l'Ingenieur You do not have access to this resource.
Request your free trial access! Free trial

Already subscribed?

2. Passivation of high-efficiency crystalline silicon photovoltaic cells

Crystalline silicon (c-Si) photovoltaic cells account for 80-90% of panels installed today. We'll start with an overview of ALD applications for this type of cell.

2.1 The challenge: constantly improving the conversion efficiency of photovoltaic cells

For c-Si cells, as for all other PV technologies, conversion efficiency is essentially limited by the quality of the absorber (which determines the lifetime of the charge carriers), resistive losses, the geometry of the electrical contacts and, finally, the recombination of charge carriers on the front and rear surfaces. The constant reduction in the thickness of silicon wafers means that surfaces play an increasingly important role. As a result, recombinations at the interfaces between a heavily doped semiconductor...

You do not have access to this resource.
Logo Techniques de l'Ingenieur

Exclusive to subscribers. 97% yet to be discovered!

You do not have access to this resource. Click here to request your free trial access!

Already subscribed?


Ongoing reading
Passivation of high-efficiency crystalline silicon photovoltaic cells

Article included in this offer

"Technological innovations"

( 185 articles )

Complete knowledge base

Updated and enriched with articles validated by our scientific committees

Services

A set of exclusive tools to complement the resources

View offer details
Contact us