ALD in Field-Effect Transistors (FETs)
ALD in Microelectronics devices - Evolution and Use in Advanced Micro-Devices

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ALD in Field-Effect Transistors (FETs)
ALD in Microelectronics devices - Evolution and Use in Advanced Micro-Devices

Authors : Rémy GASSILLOUD, Messaoud BEDJAOUI

Publication date: September 10, 2026 | Lire en français

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1. ALD in Field-Effect Transistors (FETs)

The field-effect transistor (FET) is a fundamental building block of the microelectronics industry. It controls the current between a source and a drain through a semiconductor channel by using an electric field applied by a gate. We will not describe its operation here; readers are referred to[E 2 430].

Since its invention, the FET has undergone major evolutions to meet growing demands for performance and miniaturization. Initially, FETs were planar: the channel was located on the surface of the substrate. Although these devices performed well, they reached their limits of miniaturization at the 28-nm...

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