Ferroelectric Memory (FeRAM)
ALD in Microelectronics devices - Evolution and Use in Advanced Micro-Devices

Ferroelectric memories represent a breakthrough in the field of storage technologies. They combine non-volatility, speed, and low power consumption. They utilize the remanent polarization of ferroelectric materials (e.g., PZT, Hf_0.5Zr_0.5O₂) to store binary data, offering a promising technology to replace traditional flash memory. There are several types and architectures of ferroelectric memories, which combine a ferroelectric layer with a read/write circuit, typically in a 1T1C (1 transistor/1 ferroelectric capacitor) architecture. We are also seeing the gradual integration of ferroelectric materials into hyper-dense DRAM (Dynamic Random Access Memory) stacks.

ALD has become indispensable for filling high-aspect-ratio trenches in DRAM applications. In most cases (except for a few known as FeFETs), the memory cell consists of a metal/insulator/metal (MIM) stack...