Innovative architectures for ultimate SOI transistors
Silicon-on-insulator technology

The DT-MOSFET is a very interesting partially depleted transistor, operating on the principle of a dynamic threshold voltage. This configuration is simply achieved by connecting the gate and the silicon layer (figure 19 e). As the gate voltage increases in weak inversion, the simultaneous increase in potential in the silicon film causes a gradual reduction in the threshold voltage. DT-MOSFET devices achieve perfect gate-charge coupling, a slope at low maximum inversion, improved transconductance and higher drain current. These features are highly attractive for low-voltage-low-power circuits: low quiescent leakage...