7. Miniaturization of components
The downscaling rules developed for the MOS transistor on bulk Si converge on the need to reduce junction thickness and increase the doping level of the
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Miniaturization of components
Bibliography
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(1) - CRISTOLOVEANU (S.), LI (S.S.) -
Electrical characterization of SOI Materials and Devices.
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Kluwer, Norwell (1995).
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(2) - CRISTOLOVEANU (S.) -
Silicon films on sapphire.
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Rep. Prog. Phys., 3, 327 (1987).
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