Nanoelectronics and nanophotonics applications
Heterostructure components : nanoelectronic and nanophotonic applications
Archive REF: NM1100 V1
Nanoelectronics and nanophotonics applications
Heterostructure components : nanoelectronic and nanophotonic applications

Author : Olivier VANBÉSIEN

Publication date: April 10, 2006 | Lire en français

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3. Nanoelectronics and nanophotonics applications

Among the many applications of one-dimensional heterostructures in nanoelectronics and nanophotonics, three have been selected as they make the most of the latest advances in knowledge, both in the conceptual field and in mastering the materials needed to build them.

3.1 Heterojunction bipolar transistors (TBH) for terahertz

The rise in transistor frequency has long been dominated by the meteoric progress of heterostructure field-effect transistors of the HEMT type, to the detriment of silicon bipolar transistors whose characteristic frequencies remained low. While the reduction of gate widths down to a few tens of nanometers still enables the performance of field-effect transistors to be improved by a simple law of scale (see §

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