Archive | REF: NM1100 V1

Heterostructure components : nanoelectronic and nanophotonic applications

Author: Olivier VANBÉSIEN

Publication date: April 10, 2006 | Lire en français

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Overview

ABSTRACT

Semiconductor heterostructures have become indispensable to the development of nanoelectronics and nanophotonics. This article provides an overview of these heterostructure components and the fields covered by their applications. Most recently, the use of high quality interfaces has achieved accuracy in the order of a half mono-layer. The selected examples fully demonstrate the importance of these extraordinary structures: heterojunction bipolar transistors (HBT), resonant interband tunneling, quantum cascade lasers (QCLs). The article concludes with a presentation of the multiple containment of two and three-dimensional heterostructures.

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 INTRODUCTION

Semiconductor heterostructures have become an essential component in the development of nanoelectronics and nanophotonics, implying the emergence of a new class of devices based on the quasi-systematic exploitation of the wave nature of particles.

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Heterostructured components: applications in nanoelectronics and nanophotonics