Archive | REF: NM1010 V1

Nanoelectronics: a passport for the nanoworld

Author: Olivier VANBÉSIEN

Publication date: February 10, 2005

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    References LE ROY (M.) LHEURETTE (E.) VANBÉSIEN (O.) LIPPENS (D.) Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor Metal-Oxide-Semiconductor design. J. Appl. Phys., 93, n° 5, 2966-71 (2003). WICHMANN (N.) DUSZYNSKI (I.) WALLART (X.) BOLLAERT (S.) CAPPY (A.) InAlAs-InGaAs double-gate HEMTs on transferred substrate. IEEE Electron. Device Letters, 25(6), 354-6 (2004). GAIDIS (M.C.) PICKETT (H.M.) SMITH (C.D.) et coll A 2.5 THz receiver front end for spaceborne applications. IEEE Trans. on Microwave Theory and Techniques, 48(4), 733-9 (2000)....
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