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LHEURETTE (E.)
VANBÉSIEN (O.)
LIPPENS (D.)
Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor Metal-Oxide-Semiconductor design.
J. Appl. Phys., 93, n° 5, 2966-71 (2003).
WICHMANN (N.)
DUSZYNSKI (I.)
WALLART (X.)
BOLLAERT (S.)
CAPPY (A.)
InAlAs-InGaAs double-gate HEMTs on transferred substrate.
IEEE Electron. Device Letters, 25(6), 354-6 (2004).
GAIDIS (M.C.)
PICKETT (H.M.)
SMITH (C.D.) et coll
A 2.5 THz receiver front end for spaceborne applications.
IEEE Trans. on Microwave Theory and Techniques, 48(4), 733-9 (2000)....
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