Properties of silicon carbide (SiC)
Physical and electronic properties of the silicon carbide (SiC)
Article REF: D3119 V1
Properties of silicon carbide (SiC)
Physical and electronic properties of the silicon carbide (SiC)

Author : Christophe RAYNAUD

Publication date: May 10, 2007, Review date: February 8, 2022 | Lire en français

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1. Properties of silicon carbide (SiC)

It was in 1907 that the semiconducting properties of SiC became apparent, when a SiC crystal subjected to a voltage of 10 V by H.J. Round began to produce yellow, orange and green light. The main properties of SiC of interest to electronics are summarized in this paragraph.

1.1 Binary diagram Si–C

Figure 1 shows the phase diagram between silicon and carbon. SiC obviously corresponds to a mixture of equal numerical quantities of the two types of atom. This shows that there is no liquid phase of SiC. In fact, at around 2,700°C, SiC decomposes into graphite and a Si-rich vapour phase. As a result, all the liquid-phase single-crystal growth techniques usually used for silicon (Czochralski...

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