Overview
ABSTRACT
The quality improvement of the base material and the fabrication technology has allowed for the development of a large number of components in silicon carbide; reflecting the evolution of this new technological branch over the last few years. This evolution has led to the current and future commercial opportunities as well as to the development of specific interrupters for the serial protection of electrical installations.
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Dominique TOURNIER: Doctorate in Electrical Engineering - Senior Lecturer at INSA Lyon
INTRODUCTION
Improvements in the quality of the base material and in manufacturing technology have led to the development of numerous silicon carbide power components, reflecting the maturity of this new technology in recent years. This evolution is reflected in current and future commercial outlets, as well as in the development of specific switches for series protection of electrical installations.
This dossier presents recent advances and achievements in silicon carbide power components, key points relating to the material and manufacturing technology, and the potential and achievements of this semiconductor material, whose use is already pushing back the limits of the silicon industry.
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SiC power components
General introduction
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