Physical and electronic properties of the silicon carbide (SiC)

Almost a century after the discovery of its semiconductor properties in 1907, silicon carbide appeared on the economic scene with the launch of the first commercial components: Schottky diodes in 2002 and JFET transistors shortly afterwards, as well as MESFETs in the microwave field. The very high cost of epitaxial substrates and layers makes it imperative to have highly accurate numerical simulations of the static and dynamic behavior of these components. Indeed, the more accurate the simulations, the more we can hope to reduce the number of tests required before the components can be made a success.