Modeling Schottky diodes in the forward regime
Physical and electronic properties of the silicon carbide (SiC)
Article REF: D3119 V1
Modeling Schottky diodes in the forward regime
Physical and electronic properties of the silicon carbide (SiC)

Author : Christophe RAYNAUD

Publication date: May 10, 2007, Review date: February 8, 2022 | Lire en français

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2. Modeling Schottky diodes in the forward regime

2.1 Description of the numerically developed model

Knowing the resistivity as calculated in § 1.6.5 , it is possible to calculate the series resistance of a Schottky or bipolar diode, whose geometrical characteristics are known (thickness of...

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