Future developments
Modules and power packages (packaging)
Article REF: D3116 V1
Future developments
Modules and power packages (packaging)

Author : Cyril BUTTAY

Publication date: May 10, 2010 | Lire en français

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6. Future developments

6.1 New applications

The development of semiconductor materials with large band gaps, foremost among which is silicon carbide (SiC), opens the way to power components operating at higher temperatures (over 500°C, see figure 1 ), and at high voltages (several tens of kilovolts)

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