2. General aspects of SiC

2.1 Material evolution

A little history

Silicon carbide was discovered in 1824 by accident, during an experiment by Berzellius , who was trying to produce diamond. Although silicon carbide does not occur naturally on earth, Moissan

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General aspects of SiC

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References

(1) - ESAME (O.) et al - Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP. - Microelectronics Journal 35, 901-908 (2004).
(2) - -

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