Overview
ABSTRACT
The maturity of a technological branch is reflected by the development of new technical solutions in numerous applications. This was the case for the silicon branch with GTO, bipolar, MOSFET or IGBT components. The silicon carbide has not reached as advanced a maturity stage as that of the silicon. However, the availability of components with superior performances to that of their Si counterparts allows for envisaging use in numerous applications. These new components are to push back the limits of the performances of the silicon branch, in high voltage and high temperature for instance.
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Dominique TOURNIER: Senior Lecturer - INSA Lyon
INTRODUCTION
The maturity of a technological sector is reflected in the emergence of new technical solutions for a wide range of applications. This was the case for the silicon sector, with GTO, bipolar, MOSFET and IGBT components...
Their development has had a major impact on the field of power electronics, enabling the design of new, more efficient energy conversion architectures and providing innovative technical solutions in many areas of electrical engineering.
SiC (silicon carbide) is not yet as mature as silicon. However, the availability of components with higher performance than their Si counterparts means that they can be used in a wide range of applications. These new components should make it possible to push back the performance limits already achieved by the silicon sector in high-voltage and high-temperature applications, for example.
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References
Manufacturers – Suppliers (non-exhaustive list)
CREE http://www.cree.com
Criepi http://criepi.denken.or.jp/en/
Dynex http://www.dynexsemi.com
GE...
Organizations
WTC consulting http://www.wtc-consult.de
Events
International SiC conferences: alternate every 2 years between an international conference (ICSCRM) and a European conference (ECSCRM).
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