Conclusions and outlook
Fully Depleted Silicon On Insulator (FD-SOI) Devices

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Conclusions and outlook


Fully Depleted Silicon On Insulator (FD-SOI) Devices

Author : Sorin CRISTOLOVEANU

Publication date: November 10, 2018, Review date: January 18, 2021 | Lire en français

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5. Conclusions and outlook

This article, supported by the previous one [E 2 380] , presents an overview of the FD-SOI sector. The basic devices, with their specific characterization methods and physical mechanisms, have been reviewed. Certain principles, methods and components remain valid in other technologies: FinFET, nanowires, 2D materials.

Progress in SOI, leading to transistors well under 10 nm thick, has been breathtaking. French researchers and engineers have distinguished themselves in the discovery and development of Smart-Cut material and integration processes, as well as in the understanding...

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