4. Innovative devices in FD-SOI technology
The advantages of FD-SOI (ultra-thin film, dielectric insulation, substrate biasing, etc.) have led to the development of a number of original devices, some of which are presented in this chapter. By way of example, the tunnel transistor (TFET) is in fact a PIN diode, as shown in figure 21 a, reverse-biased. A positive voltage on the gate emulates an N + region adjacent to the P + terminal. The band-to-band tunneling (BTBT) mechanism generates a current that theoretically benefits from a sub-threshold (swing) slope below the thermodynamic limit of 60 mV/decade
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Innovative devices in FD-SOI technology
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