Conclusion
Integrated Bipolar Transistors Silicon Germanium BiCMOS Technologies
Article REF: E2427 V2
Conclusion
Integrated Bipolar Transistors Silicon Germanium BiCMOS Technologies

Author : Pascal CHEVALIER

Publication date: January 10, 2021 | Lire en français

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5. Conclusion

The history of the bipolar transistor began with its invention in 1947. Ten years later, in 1957, the concept of the heterojunction bipolar transistor (TBH) was discovered. However, the first Si/SiGe TBH was not manufactured until 1987, and it took another ten years for the first SiGe BiCMOS technology to appear in production. The advantages of bipolar transistors over MOS transistors led to the use of bipolar and BiCMOS technologies in many applications, including the first Pentium microprocessors manufactured by Intel in 1994 (using 0.6 µm BiCMOS Si technology). As for BiCMOS SiGe technology, its golden age was the 2000s, with its massive use in RF transmitter/receiver modules for cell phones. The evolution of CMOS technology, known as Gordon Moore's Law, which predicted that the number of transistors per circuit of the same size would double, at constant cost, every eighteen months,...

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