Glossary
Integrated Bipolar Transistors Silicon Germanium BiCMOS Technologies
Article REF: E2427 V2
Glossary
Integrated Bipolar Transistors Silicon Germanium BiCMOS Technologies

Author : Pascal CHEVALIER

Publication date: January 10, 2021 | Lire en français

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6. Glossary

BiCMOS (Bipolar Complementary Metal Oxide Semiconductor)

Technologies integrating bipolar transistors with n-type and p-type CMOS field-effect transistors.

B-C (Base-Collector)

Designates the eponymous junction.

BV (Breakdown Voltage)

Breakdown voltage (see specific acronyms for bipolar transistor breakdown voltages).

CMOS (Complementary Metal Oxide Semiconductor)

Si technologies using n-type and p-type field-effect transistors.

C-BiCMOS (Complementary Bipolar Complementary Metal Oxide Semiconductor)

Technologies integrating NPN and PNP bipolar transistors with n-type and p-type field-effect transistors.

C-S (Collector-Substrate)

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