Operation and electrical characteristics of the bipolar transistor
Integrated Bipolar Transistors Silicon Germanium BiCMOS Technologies
Article REF: E2427 V2
Operation and electrical characteristics of the bipolar transistor
Integrated Bipolar Transistors Silicon Germanium BiCMOS Technologies

Author : Pascal CHEVALIER

Publication date: January 10, 2021 | Lire en français

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1. Operation and electrical characteristics of the bipolar transistor

1.1 How it works

The operation of the component is apprehended using a homojunction NPN bipolar transistor, i.e. made of a single material such as silicon. This active component is made up of two head-to-tail PN junctions, each made up of three main regions successively doped N + , P and N. These regions are called emitter, base and collector respectively. In this paragraph, we give the operating principles for an NPN transistor in a forward operating mode, i.e. when the emitter-base junction (E-B) is forward biased (V BE > 0 V), while the base-collector junction (B-C) is reverse biased (V BC < 0 V). These polarizations will modulate the two...

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