Basic principle and structures of MOS transistors
MOS transistor and its manufacturing technology
Article REF: E2430 V2
Basic principle and structures of MOS transistors
MOS transistor and its manufacturing technology

Author : Thomas SKOTNICKI

Publication date: February 10, 2000 | Lire en français

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1. Basic principle and structures of MOS transistors

1.1 Field effect

  • The operating principle of a MOS (Metal-Oxide-Semiconductor) transistor is based on the "field effect", which consists in electrostatically modulating a density of mobile charges in a semiconductor. This modulation is caused by an electric field perpendicular to the direction of movement of these charges, and acting between two electrodes separated by a dielectric, as in a planar capacitor.

Figure 1 illustrates the field effect in a schematic MOS transistor:

  • One of the electrodes (grid G) controls the intensity of the electric field and consequently the density of mobile...

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