Article | REF: E2430 V2

MOS transistor and its manufacturing technology

Author: Thomas SKOTNICKI

Publication date: February 10, 2000 | Lire en français

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    5. MOS transistor development outlook

    For over 30 years, the miniaturization of the MOS transistor has been guided by a very simple set of "downscaling rules" proposed by Dennard (1967), based on the fundamental observation that the transistor's dimensions can be reduced without compromising its electrical characteristics.

    More precisely, these rules provide for the preservation of what is today called the electrostatic integrity of the transistor (this is primarily, the preservation of internal electrostatic fields and thus the maintenance of control over small-dimensional effects) when a reduction in all device dimensions (L, W, T ox , x J ) by a factor k is accompanied by a reduction in supply voltage and an increase in dopant concentration in the channel by the same factor...

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