5. MOS transistor development outlook

More precisely, these rules provide for the preservation of what is today called the electrostatic integrity of the transistor (this is primarily, the preservation of internal electrostatic fields and thus the maintenance of control over small-dimensional effects) when a reduction in all device dimensions (L, W, T _ox , x _J ) by a factor k is accompanied by a reduction in supply voltage and an increase in dopant concentration in the channel by the same factor...