Corrective effects
MOS transistor and its manufacturing technology
Article REF: E2430 V2
Corrective effects
MOS transistor and its manufacturing technology

Author : Thomas SKOTNICKI

Publication date: February 10, 2000 | Lire en français

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3. Corrective effects

The operation of a long, wide transistor (W; L > > 1 µm) is correctly described by the model presented in paragraph 2 .

Submicron transistors are subject to a number of corrective, parasitic effects, the manifestations of which can be considered second-order when W;L1...

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